TC110数据手册原装现货微芯科技第4页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
TC110G-03	文件：2.91064 Mbytes Page：5 Pages	50K gates/D.6ns. Compact and powerful! General Toshiba CMOS Gate Array family, TC11 OG Series, with interconnect routing which is not confined to routing channels. This technique increases silicon efficiency (functions/mm2 ). Higher density and Toshiba HC2MOS process provide subnanosecond speeds of 0.6ns typical gate delays (2- 文件：2.91064 Mbytes 页数：5 Pages	TOSHIBA 东芝	TOSHIBA
TC110G05	文件：2.91064 Mbytes Page：5 Pages	50K gates/D.6ns. Compact and powerful! General Toshiba CMOS Gate Array family, TC11 OG Series, with interconnect routing which is not confined to routing channels. This technique increases silicon efficiency (functions/mm2 ). Higher density and Toshiba HC2MOS process provide subnanosecond speeds of 0.6ns typical gate delays (2- 文件：2.91064 Mbytes 页数：5 Pages	TOSHIBA 东芝	TOSHIBA
TC110G-05	文件：2.91064 Mbytes Page：5 Pages	50K gates/D.6ns. Compact and powerful! General Toshiba CMOS Gate Array family, TC11 OG Series, with interconnect routing which is not confined to routing channels. This technique increases silicon efficiency (functions/mm2 ). Higher density and Toshiba HC2MOS process provide subnanosecond speeds of 0.6ns typical gate delays (2- 文件：2.91064 Mbytes 页数：5 Pages	TOSHIBA 东芝	TOSHIBA
TC110G08	文件：2.91064 Mbytes Page：5 Pages	50K gates/D.6ns. Compact and powerful! General Toshiba CMOS Gate Array family, TC11 OG Series, with interconnect routing which is not confined to routing channels. This technique increases silicon efficiency (functions/mm2 ). Higher density and Toshiba HC2MOS process provide subnanosecond speeds of 0.6ns typical gate delays (2- 文件：2.91064 Mbytes 页数：5 Pages	TOSHIBA 东芝	TOSHIBA
TC110G-08	文件：2.91064 Mbytes Page：5 Pages	50K gates/D.6ns. Compact and powerful! General Toshiba CMOS Gate Array family, TC11 OG Series, with interconnect routing which is not confined to routing channels. This technique increases silicon efficiency (functions/mm2 ). Higher density and Toshiba HC2MOS process provide subnanosecond speeds of 0.6ns typical gate delays (2- 文件：2.91064 Mbytes 页数：5 Pages	TOSHIBA 东芝	TOSHIBA
TC110G11	文件：2.91064 Mbytes Page：5 Pages	50K gates/D.6ns. Compact and powerful! General Toshiba CMOS Gate Array family, TC11 OG Series, with interconnect routing which is not confined to routing channels. This technique increases silicon efficiency (functions/mm2 ). Higher density and Toshiba HC2MOS process provide subnanosecond speeds of 0.6ns typical gate delays (2- 文件：2.91064 Mbytes 页数：5 Pages	TOSHIBA 东芝	TOSHIBA
TC110G-11	文件：2.91064 Mbytes Page：5 Pages	50K gates/D.6ns. Compact and powerful! General Toshiba CMOS Gate Array family, TC11 OG Series, with interconnect routing which is not confined to routing channels. This technique increases silicon efficiency (functions/mm2 ). Higher density and Toshiba HC2MOS process provide subnanosecond speeds of 0.6ns typical gate delays (2- 文件：2.91064 Mbytes 页数：5 Pages	TOSHIBA 东芝	TOSHIBA
TC110G14	文件：2.91064 Mbytes Page：5 Pages	50K gates/D.6ns. Compact and powerful! General Toshiba CMOS Gate Array family, TC11 OG Series, with interconnect routing which is not confined to routing channels. This technique increases silicon efficiency (functions/mm2 ). Higher density and Toshiba HC2MOS process provide subnanosecond speeds of 0.6ns typical gate delays (2- 文件：2.91064 Mbytes 页数：5 Pages	TOSHIBA 东芝	TOSHIBA
TC110G-14	文件：2.91064 Mbytes Page：5 Pages	50K gates/D.6ns. Compact and powerful! General Toshiba CMOS Gate Array family, TC11 OG Series, with interconnect routing which is not confined to routing channels. This technique increases silicon efficiency (functions/mm2 ). Higher density and Toshiba HC2MOS process provide subnanosecond speeds of 0.6ns typical gate delays (2- 文件：2.91064 Mbytes 页数：5 Pages	TOSHIBA 东芝	TOSHIBA
TC110G17	文件：2.91064 Mbytes Page：5 Pages	50K gates/D.6ns. Compact and powerful! General Toshiba CMOS Gate Array family, TC11 OG Series, with interconnect routing which is not confined to routing channels. This technique increases silicon efficiency (functions/mm2 ). Higher density and Toshiba HC2MOS process provide subnanosecond speeds of 0.6ns typical gate delays (2- 文件：2.91064 Mbytes 页数：5 Pages	TOSHIBA 东芝	TOSHIBA

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技术参数

N.F.(dB)：
0.5 @12GHz
P-1dB(dBm)：
18.5
Gain(dB)：
12 @12GHz
S-Parameters：
2V10mA;4V25mA
Notes：
Chip

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市凌旭科技有限公司	TC110G14AF-0079	TOSHIBA	2016+	QFP	6000	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市联世界科技有限公司	TC110G17AT-0021	TOS	24+/25+		244	原装正品现货库存价优	询价
深圳市福安瓯科技有限公司	TC110G26AF-0080	TOS	25+	QFP	2500	强调现货,随时查询!	询价
谛辉(北京/上海/青岛 )电子科技有限公司	TC110G11AF-0150	TOSHIBA	25+	QFP	18000	原厂直接发货进口原装	询价
深圳市毅创腾电子科技有限公司	TC110G32AF-0035	TOSHIBA	23+	PQFP	750	专营高频管模块,全新原装!	询价
齐创科技(上海,北京,青岛)有限公司	TC1108-33VDB	MICROCHIP	23+	SOT-223	5000	原装正品,假一罚十	询价
深圳市益百分电子有限公司	TC110G32AF-0118	TOSH	92+	QFP144	3960	全新原装进口自己库存优势	询价
深圳市弘为电子有限公司	TC1107-3.0VUATR	MICROCHIP	24+	原封装	2312	原装现货假一罚十	询价
深圳市一线半导体有限公司	TC110G51AF		24+		2500	自己现货	询价
深圳市卓越微芯电子有限公司	TC1107-3.0VUA	MICROCH	25+	MSOP-8	247	百分百原装正品真实公司现货库存本公司只做原装可	询价

更多TC110供应商更新时间2026-1-27 22:58:00

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