PFM/PWM Step-Up DC/DC Controller

General Description The TC110 is a step-up (Boost) switching controller that furnishes output currents of up to 300mA while delivering a typical efficiency of 84. The TC110 normally operates in pulse width modulation mode (PWM), but automatically switches to pulse frequency modulation (PFM) at lo

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Microchip

微芯科技

PFM/PWM Step-Up DC/DC Controller

文件：465.55 Kbytes 页数：16 Pages

Microchip

微芯科技

PFM/PWM Step-Up DC/DC Converter

The TC110 is a step-up (Boost) switching controller that furnishes output currents as high as 300 mA while delivering a typical efficiency of 84%. The TC110 normally operates in pulse width modulation mode (PWM), but automatically switches to pulse frequency modulation (PFM) at low output loads Guaranteed Start-Up at 0.9V\n100/300 kHz\n50/120 µA\n50 µA (Typ) Supply Current (fOSC = 100 KHz)\n300 mA Output Current @ VIN =2.7V\n0.5 µA Shutdown Mode\n100 KHz and 300 KHz Switching Frequency Options\nProgrammable Soft-Start\n84% Efficiency;

Microchip

微芯科技

SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE

Bi-Directional VDRM - 58 to 320 Volts IPP - 100 Amperes FEATURES ● Oxide Glass Passivated Junction ● Bidirectional protection in a single device ● Surge capabilities up to 100A @ 10/1000us or 400 @ 8/20us ● High off state Impedance and low on state voltage ● Plastic material has UL flammab

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LITEON

光宝科技

Low Noise and Medium Power GaAs FETs

DESCRIPTION The TC1101 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 30 GHz and suitable for low noise and medium power amplifier applications including

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TRANSCOM

全讯科技

Low Noise and Medium Power GaAs FETs

[TRANSCOM] DESCRIPTION The TC1101 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 40 GHz and suitable for low noise and medium power amplifier applicatio

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Low Noise and Medium Power GaAs FETs

DESCRIPTION The TC1101V is the same as TC1101 expect via holes in the source pads for reducing the grounding inductance. It can be used in circuits up to 30 GHz and suitable for low noise and medium power amplifier application including a wide range of commercial and military application. All d

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TRANSCOM

全讯科技

Super Low Noise GaAs FETs

DESCRIPTION The TC1102 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure and high associated gain. The device can be used in circuits up to 30 GHz and suitable for low noise application including a wide range of commercial and military applica

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TRANSCOM

全讯科技

SMD Telecoil 10.5x1.4x2mm

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PREMO

普莱默

SMD Telecoil 10.5x1.4x2mm

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PREMO

普莱默