首页 >TBC849B>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
INSULATIONTRANSFORMERFOR10BASE-T | BOTHHAND Bothhand USA | BOTHHAND | ||
SWITCHMODEDC/DCPOWERCONVERSIONTRANSFORMERS | PMI Premier Magnetics, Inc. | PMI | ||
INA849Ultra-Low-Noise(1nV/?숰z),High-Bandwidth,InstrumentationAmplifier | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
INA849Ultra-Low-Noise(1nV/?숰z),High-Bandwidth,InstrumentationAmplifier | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
PGA849Low-Noise,Wide-Bandwidth,PrecisionProgrammableGainInstrumentationAmplifier 1Features •Differentialtosingle-endedconversion •Eightpin-programmablebinarygains –G(V/V)=⅛,¼,½,1,2,4,8,and16 •Lowgainerrordrift:±2ppm/°C(maximum) •Fastersignalprocessing: –Widebandwidth:10MHzatallgains –Highslewrate:35V/μsatG≥½V/V –Settlingti | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
PGA849Low-Noise,Wide-Bandwidth,PrecisionProgrammableGainInstrumentationAmplifier 1Features •Differentialtosingle-endedconversion •Eightpin-programmablebinarygains –G(V/V)=⅛,¼,½,1,2,4,8,and16 •Lowgainerrordrift:2ppm/°C(max) •Fastersignalprocessing: –Widebandwidth:10MHzatallgains –Highslewrate:35V/μs –Settlingtime: 500nsto0.01 | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
NPNSILICONPLANARMEDIUMPOWER FEATURES *5Ampscontinuouscurrent *Upto20Ampspeakcurrent *Verylowsaturationvoltages APPLICATIONS *LCDbacklightconverter *Flashgunconverters *Batterypoweredcircuits *Motordrivers | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
NPNSILICONPLANARMEDIUMPOWERHIGHCURRENTTRANSISTOR FEATURES *5Ampscontinuouscurrent *Upto20Ampspeakcurrent *Verylowsaturationvoltages APPLICATIONS *LCDbacklightconverter *Flashgunconverters *Batterypoweredcircuits *Motordrivers | Zetex Zetex Semiconductors | Zetex | ||
NPNSILICONPLANARMEDIUMPOWERHIGHCURRENTTRANSISTOR FEATURES *5Ampscontinuouscurrent *Upto20Ampspeakcurrent *Verylowsaturationvoltages APPLICATIONS *LCDbacklightconverter *Flashgunconverters *Batterypoweredcircuits *Motordrivers | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
iscSiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=30V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat)=240mV(Max)@IC=7A APPLICATIONS ·Designedforpoweramplifier,highspeedswitchingand regulatedpowersupplyapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
