首页 >TB6608FNG(O.EL)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
GepcoaBeldenBrand,AnalogAudioCable,8Pair22AWG(7x30)BareCopperconductors,FEPInsulation,IndividuallyShielded,PVDFJacket,CMPrated | BELDENBelden Inc. 百通电缆设计科技有限公司 | BELDEN | ||
DCMotorForward/ReverseDualSpeedElectronicGovernors ■Overview TheAN6608,theAN6609NandtheAN6609NSaretheelectronicgovernorswhichincorporatetheforward/reverserotationanddoublespeedcontrolsoftheDC-motorsusedforradio/cassettetaperecorder,andthefunctionssuchasfastforward,rewind,brake,andpause.Theyarealsoavailab | PanasonicPanasonic Semiconductor 松下松下电器 | Panasonic | ||
20VComplementaryMOSFET | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
HELP3TMBand8/WCDMA3.4V/28.5dBmLinearPAModule | ANADIGICS ANADIGICS, Inc | ANADIGICS | ||
300mAHighPSRR,LowNoiseLDORegulator GENERALDESCRIPTION TheAX6608isalowdropout,highPSRR,lownoiselinearregulatorwithverylowquiescent.Itcansupply300mAoutputcurrentwithlowdropoutabout250mV.TheDeviceincludespasselement,erroramplifier,band-gap,current-limitandthermalshutdowncircuitry.Thecharact | AXELITEAXElite technology co. ltd 亚瑟莱特亚瑟莱特科技股份有限公司 | AXELITE | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,4A,RDS(ON)=76mΩ@VGS=10V. RDS(ON)=100mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,4A,RDS(ON)=76mW@VGS=10V. RDS(ON)=100mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
N-Channel60V(D-S)MOSFET FEATURES •100RgandUISTested •DT-TrenchPowerMOSFET APPLICATIONS •NotebookPCCore •VRM/POL | DINTEK Din-Tek Semiconductor | DINTEK | ||
8/6-SlotDesktop/WallmountChassiswithPS/2andRedundantPowerSupplyOptions | ADVANTECHAdvantech Co., Ltd. 研华科技研华科技（中国）有限公司 | ADVANTECH | ||
lHEXFETPowerMOSFET Description TheIRF6608combinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaMICRO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout | IRF International Rectifier | IRF |
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