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FSL9230D

3A,-200V,1.50Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSL9230R

3A,-200V,1.50Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSS9230D

4A,-200V,1.60Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSS9230R

4A,-200V,1.60Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

GFC9230

PChannelPowerMOSFET

GSG

Gunter Seniconductor GmbH.

IRF9230

P-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRF9230

TRANSISTORSP-CHANNEL(Vdss=-200V,Rds(on)=0.80ohm,Id=-6.5A)

ProductSummary TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorrever

IRF

International Rectifier

IRF9230

-5.5Aand-6.5A,-150Vand-200V,0.8and1.2Ohm,P-ChannelPowerMOSFETs

Description ThesedevicesareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedfor

Intersil

Intersil Corporation

IRF9230

P-CHANNELPOWERMOSFETS

FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半导体

IRF9230

Avalanche-Energy-RatedP-ChannelPowerMOSFETs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

详细参数

  • 型号:

    T9230W

  • 制造商:

    Nortools International Ltd

  • 功能描述:

    T & D SET 3/16-1/2 BSW

供应商型号品牌批号封装库存备注价格
NS/国半
22+
SOP-8
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
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ApexToolGroup/CooperTool
5
全新原装 货期两周
询价
Apex Tool Group/Cooper Tools
2022+
1
全新原装 货期两周
询价
博通
22+
NA
500000
万三科技,秉承原装,购芯无忧
询价
Triquint
24+
SMD
1680
Triquint专营品牌进口原装现货假一赔十
询价
三年内
1983
只做原装正品
询价
TE/泰科
2508+
/
343380
一级代理,原装现货
询价
FINDER
23+
继电器
9896
询价
24+
3000
自己现货
询价
TOSHIBA
20+
SOP16
2960
诚信交易大量库存现货
询价
更多T9230W供应商 更新时间2025-7-15 9:38:00