2N7002

N-Channel60-V(D-S)MOSFET

FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI

2N7002

N-CHANNELENHANCEMENTMODEVERTICALDMOSFET

FEATURES *60VoltVCEO

2N7002

N-ChannelEnhancement-ModeVerticalDMOSFETs

GeneralDescription TheSupertex2N7002isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh

T2N7002BK

High-SpeedSwitching

Features (1)ESD(HBM)level2kV (2)Lowdrain-sourceon-resistance :RDS(ON)=1.05Ω(typ.)(@VGS=10V) RDS(ON)=1.15Ω(typ.)(@VGS=5.0V) RDS(ON)=1.2Ω(typ.)(@VGS=4.5V) Applications •High-SpeedSwitching

TQM2N7002CU

SmallSignalN-ChannelMOSFET

FEATURES AEC-Q101Qualified Advancedtrenchcelldesign RoHScompliant Halogen-free APPLICATIONS Switchingcircuits High-speedlinedriver Low-sideloadswitch Relaydriver

TQM2N7002CX

SmallSignalN-ChannelMOSFET

FEATURES AEC-Q101Qualified Advancedtrenchcelldesign RoHScompliant Halogen-free APPLICATIONS Switchingcircuits High-speedlinedriver Low-sideloadswitch Relaydriver