T2955V

N-Channel 60 V (D-S) MOSFET

TGF2955

40WattDiscretePowerGaNonSiCHEMT

TIP2955

ComplementarySiliconHighPowerTtransistors

PNPTIP2955 NPNTIP3055 DESCRIPTION TheTIP3055isasiliconEpitaxial-BasePlanarNPNtransistormountendinTO-247plasticpackage.Itisintentedforpowerswitchingcircuits,seriesandshuntregulators,outputstagesandhi-fiamplifiers. ThecomplementaryPNPtypeistheTIP295

TIP2955

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3PNpackage •ComplementtotypeTIP3055 •90Wat25°Ccasetemperature •15Acontinuouscollectorcurrent APPLICATIONS •Designedforgeneral–purpose switchingandamplifierapplications.

TIP2955

SiliconPNPPowerTransistor

DESCRIPTION •ExcellentSafeOperatingArea •DCCurrentGain-:hFE=20-70@lc=-4A •Collector-EmitterSaturationVoltage-:VCE(sat)=-1.1V(Max)@lc=-4A •ComplementtoTypeTIP3055 APPLICATIONS •Designedforgeneral-purposeswitchingandamplifierapplications.

TIP2955

ComplementarySiliconPowerTransistors

15AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS,90WATTS •DCCurrentGain−hFE=20-70@IC=4.0Adc •Collector−EmitterSaturationVoltage−VCE(sat)=1.1Vdc(Max)@IC=4.0Adc •ExcellentSafeOperatingArea •ThesearePb−FreeDevices*

TIP2955

ComplementarySiliconPowerTransistors

15AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS,90WATTS •DCCurrentGain−hFE=20-70@IC=4.0Adc •Collector−EmitterSaturationVoltage−VCE(sat)=1.1Vdc(Max)@IC=4.0Adc •ExcellentSafeOperatingArea •ThesearePb−FreeDevices*

TIP2955

SILICONPOWERTRANSISTORS

PNPTIP2955 NPNTIP3055 TheTIP3055isaNPNepitaxial-basetransistorinTO3PNpackage.Itisintendedforpowerswitchingcircuits,seriesandshuntregulators,outputstageandhi-fiamplifiers.ThecomplementaryistheTIP2955ForPNPtypesVoltageandCurentareNegative.Complianceto

TIP2955

PNPPLANARSILICONTRANSISTOR(AUDIOPOWERAMPLIFIERDCTODCCONVERTER)

AudioPowerAmplifier DCtoDCConverter *HighCurrentCapability *HighPowerDissipation *ComplematarytoTIP3055

TIP2955

POWERTRANSISTORSCOMPLEMENTARYSILICON

TIP2955PNP TIP3055NPN 15AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS90WATTS ...designedforgeneral–purposeswitchingandamplifierapplications. •DCCurrentGain—hFE=20–70@IC=4.0Adc •Collector–EmitterSaturationVoltage—VCE(sat)=1.1Vdc(Max)@