T10A1

文件：83.03 Kbytes 页数：1 Pages

EDAL

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 188A, RDS(ON) = 2.1 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) = 3.2 mW @VGS = 4.5V. RoHS compliant.

文件：484.68 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 188A, RDS(ON) = 2.1 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) = 3.2 mW @VGS = 4.5V. RoHS compliant.

文件：484.68 Kbytes 页数：5 Pages

CET-MOS

华瑞

Plug-in Signal Conditioners K-UNIT

文件：123.27 Kbytes 页数：4 Pages

MSYSTEM

爱模