F1129MBEVB

50ΩSE-In–100ΩDIFF-OutAmplifier3.0GHzto4.2GHz

Features RFrange:3.0GHzto4.2GHz Gain=19dBat3.55GHz Noisefigure=1.8dBat3.55GHz OIP3=+32dBmat3.55GHz OutputP1dB=+18dBmat3.55GHz Gainvariationovertemperature=±0.15dBtypical 50Ωsingle-endedinputimpedances 100Ωdifferentialoutputimpedances 3.3Vor5Vp

F1129MBNELI

50ΩSE-In–100ΩDIFF-OutAmplifier3.0GHzto4.2GHz

Features RFrange:3.0GHzto4.2GHz Gain=19dBat3.55GHz Noisefigure=1.8dBat3.55GHz OIP3=+32dBmat3.55GHz OutputP1dB=+18dBmat3.55GHz Gainvariationovertemperature=±0.15dBtypical 50Ωsingle-endedinputimpedances 100Ωdifferentialoutputimpedances 3.3Vor5Vp

GP1129

U.S.ELECTRICALDIVISIONMANCHESTER,NH03108

HAT1129R

P-ChannelMOSFETusesadvancedtrenchtechnology

HTT1129E

SiliconNPNEpitaxialTwinTransistor

Features •Include2transistorsinasmallsizeSMDpackage:EMFPAK–6(6Leads:1.2x0.8x0.5mm)

HTT1129EZTL-E

SiliconNPNEpitaxialTwinTransistor

Features •Include2transistorsinasmallsizeSMDpackage:EMFPAK–6(6Leads:1.2x0.8x0.5mm)

ISF1129

N-ChannelPowerMOSFET

DESCRIPTION ·AvalancheRated ·DrainSourceVoltage- :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=230mΩ(Max)@VGS=10V ·100%avalanchetested APPLICATIONS ·HighPowerDensity ·EasytoMount ·SpaceSavings

LT1129

LowDropoutNegativeMicropowerRegulatorinThinSOT

LT1129

400mVDropoutVoltage

LT1129

1.1A,LowNoise,LowDropoutLinearRegulator