TPH1110ENH

MOSFETsSiliconN-channelMOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators Features (1)High-speedswitching (2)Smallgatecharge:QSW=2.6nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=96mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=200V) (5

TPH1110FNH

MOSFETsSiliconN-channelMOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators Features (1)High-speedswitching (2)Smallgatecharge:QSW=4.2nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=95mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=250V) (5

TPN1110ENH

MOSFETsSiliconN-channelMOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators Features (1)High-speedswitching (2)Smallgatecharge:QSW=2.6nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=96mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=200V) (5

TPS1110

SINGLEP-CHANNELLOGIC-LEVELMOSFETS

TPS1110D

SINGLEP-CHANNELLOGIC-LEVELMOSFETS

TPS1110DR

SINGLEP-CHANNELLOGIC-LEVELMOSFETS

TR1110

SILICONCONTROLLEDRECTIFIER

SILICONCONTROLLEDRECTIFIER AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suffixtobasepartnumber.

TSD-1110

OFF-LINESWITCHMODETRANSFORMERS

GENERALAPPLICATIONINFORMATION PremierMagneticsOff-LineSwitchModeTransformershavebeendesignedforusewithPowerIntegrations,Inc.TOPXXXseriesofoff-linePWMswitchingregulatorsintheFlybackBuck-Boostcircuitconfiguration.Thisconversiontopologycanprovideisolatedmultipleo

TWL1110

VOICE-BANDAUDIOPROCESSORVBAPE

TWL1110GQE

VOICE-BANDAUDIOPROCESSORVBAPE