丝印：TPH1110FNH；Package：SOP；MOSFETs Silicon N-channel MOS

Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators Features (1) High-speed switching (2) Small gate charge: QSW = 4.2 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 95 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 250 V) (5

文件：226.09 Kbytes 页数：9 Pages

TOSHIBA

东芝

Power MOSFET (N-ch 150V VDSS 250V)

Application Scope：Motor drivers / Switching regulators\nPolarity：N-ch\nGeneration：U-MOSⅧ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID 15 A \nPower Dissipation PD 57 W \nDrain-Source voltage VDSS 250 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

东芝

MOSFETs Silicon N-channel MOS

Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators Features (1) High-speed switching (2) Small gate charge: QSW = 2.6 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 96 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 200 V) (5

文件：238.41 Kbytes 页数：9 Pages

TOSHIBA

东芝

SINGLE P-CHANNEL LOGIC-LEVEL MOSFETS

文件：242.88 Kbytes 页数：10 Pages

TI

德州仪器

SINGLE P-CHANNEL LOGIC-LEVEL MOSFETS

文件：242.88 Kbytes 页数：10 Pages

TI

德州仪器