丝印：TPH1110ENH；Package：SOP；MOSFETs Silicon N-channel MOS

Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators Features (1) High-speed switching (2) Small gate charge: QSW = 2.6 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 96 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 200 V) (5

文件：229.84 Kbytes 页数：9 Pages

TOSHIBA

东芝

Power MOSFET (N-ch 150V VDSS 250V)

Application Scope：High efficiency DC/DC converters / Switching regulators\nPolarity：N-ch\nGeneration：U-MOSⅧ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID 13 A \nPower Dissipation PD 42 W \nDrain-Source voltage VDSS 200 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

东芝

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar transistor For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit boa

文件：354.68 Kbytes 页数：14 Pages

PANASONIC

松下

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar transistor For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit boa

文件：354.68 Kbytes 页数：14 Pages

PANASONIC

松下

Silicon PNP epitaxial planer transistor

For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half. ■ Basic Part Number of Element ● UN1110 × 2 elements

文件：33.5 Kbytes 页数：2 Pages

PANASONIC

松下