2SK2463

Marking：T100；Package：MPT3；Small switching (60V, 2A)

●Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)WideSOA(safeoperatingarea). 4)Low-voltagedrive(4V). 5)Easilydesigneddrivecircuits. 6)Easytoparallel.

2SK3065

Marking：T100；Package：MPT3；Small switching (60V, 2A)

Features 1)Lowonresistance. 2)High-speedswitching. 3)Optimumforapocketresourceetc.becauseofundervoltageactuation(2.5Vactuation). 4)Drivingcircuitiseasy. 5)Easytouseparallel. 6)Itisstrongtoanelectrostaticdischarge. Structure SiliconN-channel MOSFETt

BC848BW

Marking：T106；Package：UMT3；NPN General Purpose Transistor

Features 1)BVCEOminimumis30V(IC=1mA) 2)ComplementstheBC858B/BC858BW.

DMHT10H032LFJ-13

Marking：T1032LJ；Package：V-DFN5045-12；100V N-CHANNEL ENHANCEMENT MODE MOSFET H-BRIDGE

Features ThermallyEfficientPackage–CoolerRunningApplications HighConversionEfficiency LowRDS(ON)–MinimizesOn-StateLosses LowInputCapacitance FastSwitchingSpeed 100UnclampedInductiveSwitching(UIS)TestinProduction– EnsuresMoreReliableandRobustEndAppl

DMT10H009LSS-13

Marking：T10H09LS；Package：SO-8；100V N-CHANNEL ENHANCEMENT MODE MOSFET

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance (RDS(ON))yetmaintainsuperiorswitchingperformance,makingitideal forhigh-efficiencypowermanagementapplications. HighFrequencySwitching SynchronousRectification DC-DCConverters Feat

DMT10H009SSS-13

Marking：T10H09SS；Package：SO-8；100V N-CHANNEL ENHANCEMENT MODE MOSFET

FeaturesandBenefits •HighConversionEfficiency •LowRDS(ON)—MinimizesOn-StateLosses •LowInputCapacitance •FastSwitchingSpeed •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) DescriptionandApplications ThisMOSFET

DMT10H010LSSQ-13

Marking：T1010LSQ；Package：SO-8；100V N-CHANNEL ENHANCEMENT MODE MOSFET

DescriptionandApplications ThisMOSFETisdesignedtomeetthestringentrequirementsofautomotiveapplications.ItisqualifiedtoAEC-Q101,supportedbyaPPAPandisidealforusein: Backlighting Powermanagementfunctions DC-DCconverters FeaturesandBenefits 100UnclampedInduc

DTA144TUA

Marking：T106；Package：UMT3；Digital transistors (built in resistor)

Features 1)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeequivalentcircuit). 2)Thebiasresistorsconsistofthin-filmresistorswithcompleteisolationtoallowpositivebiasingoftheinput.Theyalsohavetheadvant

DTA144WUA

Marking：T106；Package：UMT3；Digital transistors (built-in resistors)

Features 1)Built-InBiasingResistors 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Thebiasresistorsconsistofthin-filmresistors withcompleteisolationtoallownegativebiasing

DTC113ZUA

Marking：T106；Package：UMT3；Digital transistors (built-in resistors)

Features 1)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeequivalentcircuit). 2)Eachbiasresistorisathin-filmresistor.Sincetheyarecompletelyinsulated,theinputcanbenegativelybiased.Theinsulationalsoel