WR-12 Waveguide Power Divider, 8-Way, 60 to 90 GHz

FEATURES Full Waveguide Band Coverage High Isolation Low Insertion Loss Inline Package APPLICATIONS Power Combing and Dividing Power Amplifiers Sub-assemblies

文件：871.93 Kbytes 页数：3 Pages

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WR-12 Waveguide Power Divider, 4-Way, 62 to 86 GHz

FEATURES High Isolation Low Insertion Loss Inline Package APPLICATIONS Power Combing and Dividing Power Amplifiers Sub-assemblies

文件：692.81 Kbytes 页数：3 Pages

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Waveguide Power Divider, E Band, 4 Way, Right Angle, 62 to 86 GHz

Description: Model SWP-62386304-12-S1 is an E band, 4-way power divider with a typical insertion loss of 1.0 dB across the frequency range of 62 to 86 GHz. The divider offers 20 dB isolation and well balanced ports, which can be used for in-phase power dividing or combining. This power divider co

文件：349.01 Kbytes 页数：2 Pages

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N-channel MOSFET

General Description This power MOSFET is produced in SAMWIN with advanced VDMOS process, planar stripe.This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is main

文件：784.84 Kbytes 页数：7 Pages

SEMIPOWER

芯派科技

4-Way Waveguide Power Divider, 71 to 86 GHz

Description: Model SWP-71386304-12-E1 is an E band, 4-way power divider with a typical insertion loss of 0.8 dB across the frequency range of 71 to 86 GHz. The divider offers 25 dB isolation and well-balanced ports, which can be used for in-phase power dividing or combining. This power divider co

文件：542.01 Kbytes 页数：3 Pages

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4-Way Waveguide Power Divider, Right Angle, 71 to 86 GHz

Description: Model SWP-71386304-12-S2 is an E band, 4-way power divider with a typical insertion loss of 1.0 dB across the frequency range of 71 to 86 GHz. The divider offers 20 dB isolation and well balanced ports, which can be used for in-phase power dividing or combining. This power divider co

文件：291.92 Kbytes 页数：3 Pages

ERAVANT

N-channel MOSFET

General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable

文件：726.95 Kbytes 页数：7 Pages

SEMIPOWER

芯派科技

N-channel MOSFET

General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable

文件：641.49 Kbytes 页数：7 Pages

SEMIPOWER

芯派科技

N-channel TO-220 MOSFET

General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitabl

文件：389.99 Kbytes 页数：5 Pages

SEMIPOWER

芯派科技

WR-10 Waveguide Power Divider, 2-Way, Inline, 75 to 110 GHz

Description: Model SWP-75311402-10-E1-3 is a full band WR-10, 2-way power divider that operates from 75 to 110 GHz. The power divider offers a typical insertion loss of 0.5 dB and typical isolation of 20 dB. All ports are well-balanced and in-phase for power dividing or combining applications acr

文件：503.42 Kbytes 页数：4 Pages

ERAVANT