SWP640中文资料芯派科技数据手册PDF规格书
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SWP640规格书详情
General Description
This power MOSFET is produced in SAMWIN with advanced VDMOS process, planar stripe.This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances.
特性 Features
N-Channel MOSFET
BVDSS(Minimum) : 200 V
RDS(ON)(Maximum) : 0.18 ohm
ID : 18A
Qg (Typical) : 40 nc
PD(@TC=25) : 139 W
产品属性
- 型号：
SWP640
- 制造商：
SEMIPOWER
- 制造商全称：
SEMIPOWER
- 功能描述：
N-channel MOSFET
