N-channel I-PAK/D-PAK/TO-220F MOSFET

General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET i

文件：946.27 Kbytes 页数：7 Pages

SEMIPOWER

芯派科技

N-channel MOSFET

General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is

文件：921.85 Kbytes 页数：7 Pages

SEMIPOWER

芯派科技

N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET

Features  High ruggedness  Low RDS(ON) (Typ 0.8Ω)@VGS=10V  Low Gate Charge (Typ 18nC)  Improved dv/dt Capability  100 Avalanche Tested  Application: LED,Charge, Adaptor General Description This power MOSFET is produced with advanced super junction technology of SAMWIN. This techno

文件：1.05236 Mbytes 页数：7 Pages

SEMIPOWER

芯派科技

4-SPST Switches

文件：252.38 Kbytes 页数：1 Pages

BOWEI

博威集成电路

4-SPST Switches

文件：252.38 Kbytes 页数：1 Pages

BOWEI

博威集成电路

4-SPST Switches

文件：252.38 Kbytes 页数：1 Pages

BOWEI

博威集成电路

4-SPST Switches

文件：252.38 Kbytes 页数：1 Pages

BOWEI

博威集成电路

4-SPST Switches

文件：252.38 Kbytes 页数：1 Pages

BOWEI

博威集成电路

4-SPST Switches

文件：252.38 Kbytes 页数：1 Pages

BOWEI

博威集成电路

4-SPST Switches

文件：252.38 Kbytes 页数：1 Pages

BOWEI

博威集成电路