N-channel I-PAK/D-PAK/TO-220F MOSFET

General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET i

文件：946.27 Kbytes 页数：7 Pages

SEMIPOWER

芯派科技

N-channel MOSFET

General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is

文件：921.85 Kbytes 页数：7 Pages

SEMIPOWER

芯派科技

N-Channel 650 V (D-S) MOSFET

文件：1.09119 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel MOSFET

Features □ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge :Qg= 15nC (Typ.) □ BVDSS=600V,ID=4A □ RDS(on) :2.3 Ω (Max) @VG=10V □ 100 Avalanche Tested

文件：743.23 Kbytes 页数：7 Pages

WISDOM