IXFM13N65

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications

IXFM13N65

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

JMPF13N65A

MDF13N65B

N-ChannelMOSFET650V,14A,0.46(ohm)

MDF13N65B

iscN-ChannelMOSFETTransistor

MDF13N65BTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=14A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.46Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

MDF13N65BTH

N-ChannelMOSFET650V,14A,0.46(ohm)

SWF13N65D

N-channelEnhancedmodeTO-220FMOSFET

Features  Highruggedness  LowRDS(ON)(Typ0.6Ω)@VGS=10V  LowGateCharge(Typ54nC)  Improveddv/dtCapability  100AvalancheTested  Application:LED,Charger,PCPower