丝印：SW；Package：SOD-123FL；Transient Voltage Suppressor

文件：1.72572 Mbytes 页数：10 Pages

ROHM

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丝印：SW；Package：SOD-123FL；Transient Voltage Suppressor

文件：1.77093 Mbytes 页数：10 Pages

ROHM

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丝印：SW；Package：SOD-123FL；Transient Voltage Suppressor

文件：1.72012 Mbytes 页数：10 Pages

ROHM

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丝印：SW；Package：SOD-123FL；Transient Voltage Suppressor

文件：1.74553 Mbytes 页数：10 Pages

ROHM

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丝印：SW；Package：SOD-123FL；Transient Voltage Suppressor

文件：1.74285 Mbytes 页数：10 Pages

ROHM

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丝印：SW；Package：SOD-123FL；Transient Voltage Suppressor

文件：1.76856 Mbytes 页数：10 Pages

ROHM

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丝印：SW；Package：SOD-123FL；Transient Voltage Suppressor

文件：1.73927 Mbytes 页数：10 Pages

ROHM

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丝印：SW20N50D；Package：TO-3PN；N-channel MOSFET

Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification

文件：881.62 Kbytes 页数：5 Pages

ETCList of Unclassifed Manufacturers

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丝印：SW055R68E7T；Package：TO-263；N-channel Enhanced mode TO-220/TO-263 MOSFET

Features  High ruggedness  Low RDS(ON)(Typ 5.6mΩ)@VGS=10V  Low Gate Charge (Typ94nC)  Improved dv/dt Capability  100 Avalanche Tested  Application:Synchronous Rectification,Li Battery Protect Board, Inverter

文件：822.3 Kbytes 页数：6 Pages

SEMIPOWER

芯派科技

丝印：SW068R08ET；Package：TO-263；N-channel Enhanced mode TO-220/TO-263 MOSFET

Features  High ruggedness  Low RDS(ON)(Typ 7.1mΩ)@VGS=10V  Low Gate Charge (Typ59nC)  Improved dv/dt Capability  100 Avalanche Tested  Application: Synchronous Rectification,Li Battery Protect Board, Inverter General Description This power MOSFET is produced with advanced tec

文件：859.71 Kbytes 页数：6 Pages

SEMIPOWER

芯派科技