丝印：SW058R72E7T；Package：TO-220；N-channel Enhanced mode TO-220 MOSFET

Features  High ruggedness  Low RDS(ON)(Typ 6.3mΩ)@VGS=10V  Low Gate Charge (Typ107nC)  Improved dv/dt Capability  100 Avalanche Tested  Application:Synchronous Rectification,Li Battery Protect Board, Inverter

文件：829.05 Kbytes 页数：6 Pages

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丝印：SW068R08ET；Package：TO-220；N-channel Enhanced mode TO-220/TO-263 MOSFET

Features  High ruggedness  Low RDS(ON)(Typ 7.1mΩ)@VGS=10V  Low Gate Charge (Typ59nC)  Improved dv/dt Capability  100 Avalanche Tested  Application: Synchronous Rectification,Li Battery Protect Board, Inverter General Description This power MOSFET is produced with advanced tec

文件：859.71 Kbytes 页数：6 Pages

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丝印：SW22N65D；Package：TO-247；N-channel Enhanced mode TO-247 MOSFETS

Features  High ruggedness  Low RDS(ON) (Typ 0.22Ω)@VGS=10V  Low Gate Charge (Typ 123nC)  Improved dv/dt Capability  100 Avalanche Tested  Application: LED , Charger, PC Power

文件：649.95 Kbytes 页数：6 Pages

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丝印：SW88N60K2；Package：TO-247；N-channel Enhanced mode TO-247 MOSFET

Features ⚫ High ruggedness ⚫ Low RDS(ON) (Typ 24mΩ)@VGS=10V ⚫ Low Gate Charge (Typ 188nC) ⚫ Improved dv/dt Capability ⚫ 100 Avalanche Tested ⚫ Application: Solar/PV inverter、Servicer、 Telecom、PC power、UPS、EV-charger General Description This power MOSFET is produced with super junction a

文件：672.31 Kbytes 页数：6 Pages

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Match GaAs SPST Switch, DC - 3 GHz with TTL/CMOS Control Input

Description M/A-COM’s SW05-0311 is a GaAs FET SPST absorptive switch with integral silicon ASIC driver. Packaged in a 16-lead ceramic surface mount package, this device offers excellent performance and repeatability from DC to 3 GHz while maintaining low power consumption. The SW05-0311 is ideall

文件：222.58 Kbytes 页数：3 Pages

MACOM

Matched GaAs SPST Switch, DC-3.0 GHz with TTL/CMOS Control Input

Description M/A-COM’s SW05-0311 is a GaAs FET SPST absorptive switch with integral silicon ASIC driver. Packaged in a 16-lead ceramic surface mount package, this device offers excellent performance and repeatability from DC to 3 GHz while maintaining low power consumption. The SW05-0311 is ideall

文件：107.02 Kbytes 页数：4 Pages

MA-COM

Drivers for GaAs FET Switches and Digital Attenuators

Introduction Many of M/A-COMs GaAs FET switches and digital attenuators cannot operate directly with simple TTL or CMOS logic, but instead require external circuits to provide appropriate control voltages. This application note, an update of M539, Drivers for GaAs FET MMIC Switches and Digital

文件：87.78 Kbytes 页数：4 Pages

MA-COM

Matched GaAs SPST Switch, DC-3.0 GHz with TTL/CMOS Control Input

Description M/A-COM’s SW05-0311 is a GaAs FET SPST absorptive switch with integral silicon ASIC driver. Packaged in a 16-lead ceramic surface mount package, this device offers excellent performance and repeatability from DC to 3 GHz while maintaining low power consumption. The SW05-0311 is ideall

文件：107.02 Kbytes 页数：4 Pages

MA-COM

N-channel Enhanced mode TO-220 MOSFET

Features ⚫ High ruggedness ⚫ Low RDS(ON) (Typ 5.2mΩ)@VGS=10V ⚫ Low Gate Charge (Typ 94nC) ⚫ Improved dv/dt Capability ⚫ 100 Avalanche Tested ⚫ Application:Synchronous Rectification, Li Battery Protect Board, Inverter

文件：583.56 Kbytes 页数：6 Pages

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N-channel Enhanced mode TO-220/TO-263 MOSFET

Features  High ruggedness  Low RDS(ON)(Typ 5.6mΩ)@VGS=10V  Low Gate Charge (Typ94nC)  Improved dv/dt Capability  100 Avalanche Tested  Application:Synchronous Rectification,Li Battery Protect Board, Inverter

文件：822.3 Kbytes 页数：6 Pages

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