丝印：SVs；Package：PG-SOT23；OptiMOS 2 Small-Signal-Transistor

文件：126.72 Kbytes 页数：3 Pages

TYSEMI

台湾TY半导体

丝印：SVS5N70D；Package：TO-252-2L；5A, 700V DP MOS POWER TRANSISTOR

DESCRIPTION SVS5N70D/MJ/MN/F/MU is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and sup

文件：486.18 Kbytes 页数：10 Pages

SILAN

士兰微

丝印：SVS5N70D；Package：TO-252-2L；5A, 700V DP MOS POWER TRANSISTOR

DESCRIPTION SVS5N70D/MJ/MN/F/MU is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and sup

文件：486.18 Kbytes 页数：10 Pages

SILAN

士兰微

丝印：SVS5N70F；Package：TO-220F-3L；5A, 700V DP MOS POWER TRANSISTOR

DESCRIPTION SVS5N70D/MJ/MN/F/MU is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and sup

文件：486.18 Kbytes 页数：10 Pages

SILAN

士兰微

丝印：SVS5N70；Package：TO-251J-3L；5A, 700V DP MOS POWER TRANSISTOR

DESCRIPTION SVS5N70D/MJ/MN/F/MU is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and sup

文件：486.18 Kbytes 页数：10 Pages

SILAN

士兰微

丝印：SVS5N70MU；Package：TO-251U-3L；5A, 700V DP MOS POWER TRANSISTOR

DESCRIPTION SVS5N70D/MJ/MN/F/MU is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and sup

文件：486.18 Kbytes 页数：10 Pages

SILAN

士兰微

丝印：SVS7N65DD2；Package：TO-252-2L；7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de

文件：281.13 Kbytes 页数：10 Pages

SILAN

士兰微

丝印：SVS7N65DD2；Package：TO-252-2L；7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de

文件：289.87 Kbytes 页数：10 Pages

SILAN

士兰微

丝印：SVS7N65DD2；Package：TO-252-2L；7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de

文件：289.87 Kbytes 页数：10 Pages

SILAN

士兰微

丝印：SVS7N65DD2；Package：TO-252-2L；7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de

文件：289.86 Kbytes 页数：10 Pages

SILAN

士兰微