平面高压MOS功率管

SVF5N60CF/D/T N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS 工艺技术制造。先进的工艺及原胞结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。\n\n 该产品可广泛应用于AC-DC开关电源，DC-DC电源转换器，高压H桥PWM马达驱动。 • 5A，600V，RDS(on)(典型值)= 1.8Ω@VGS=10V\n• 低栅极电荷量\n• 低反向传输电容\n• 开关速度快\n• 提升了dv/dt 能力;

Silan

士兰微

Power MOSFET

文件：1.07807 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

5A, 600V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize

文件：489.01 Kbytes 页数：10 Pages

SILAN

士兰微

5A, 600V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize

文件：489.01 Kbytes 页数：10 Pages

SILAN

士兰微