SVF2N60FG数据手册Silan中文资料规格书

描述 Description

SVF2N60M/MG/MJ/N/NF/F/FG/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutationmode.\r
These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.

特性 Features

·2A,600V,RDS(on)(typ.)=3.7Ω@VGS=10V\r
·Low gate charge\r
·Low Crss\r
·Fast switching\r
·Improved dv/dt capability

应用 Application

 适配器
LED电源