P-channel Enhancement Mode Power MOSFET

Features  VDS= -60V, ID= -20A RDS(ON)

文件：913.4 Kbytes 页数：4 Pages

Bychip

百域芯

Power MOSFET

文件：88.01 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET

ONSEMI

安森美半导体

N-Channel 60 V (D-S) MOSFET

文件：1.00628 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

40 Watt Discrete Power GaN on SiC HEMT

文件：1.5181 Mbytes 页数：19 Pages

TriQuint

COMPLEMENTARY SILICON POWER TRANSISTORS

NPN --> TIP3055 PNP --> TIP2955 Description The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications. Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ Gen

文件：45.62 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体