首页 >SUD30N03-30>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SUD30N03-30 | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=30A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=30mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
SUD30N03-30 | N-Channel 30-V (D-S), 175 DegreeCelcious MOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | |
SUD30N03-30 | N-Channel 30-V (D-S) MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | |
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI |
详细参数
- 型号：
SUD30N03-30
- 功能描述：
MOSFET 30V 30A 50W
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
5000 |
只做原厂渠道 可追溯货源 |
询价 | |||
24+ |
N/A |
2000 |
询价 | ||||
VISHAY |
23+ |
TO-252 |
19567 |
询价 | |||
VISHAY |
1822+ |
TO-252 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
VISHAY |
24+ |
TO-252 |
90000 |
一级代理商进口原装现货、假一罚十价格合理 |
询价 | ||
VISHAY/威世通 |
18+ |
TO-252 |
41200 |
原装正品,现货特价 |
询价 | ||
VIS |
24+ |
TO-252 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
VISHAY |
24+ |
TO-252 |
6430 |
原装现货/欢迎来电咨询 |
询价 | ||
VIS |
23+ |
TO-252 |
30000 |
代理全新原装现货,价格优势 |
询价 | ||
VISHAY |
1709+ |
SOT-252 |
32500 |
普通 |
询价 |
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