N沟道600 V、0.025 Ohm典型值、98 A MDmesh(TM) II功率MOSFET，Max247封装

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most • 100% avalanche tested \n• Low input capacitance and gate charge \n• Low gate input resistance;

ST

意法半导体

Low input capacitance and gate charge

文件：815.87 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

SMD3

ROHM

罗姆

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