STWA88N65M5

N沟道650 V、0.024 Ohm典型值、84 A MDmesh M5功率MOSFET，TO-247长引线封装

These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and supe; • Higher VDSS rating \n• Higher dv/dt capability \n• Excellent switching performance \n• Easy to drive \n• 100% avalanche tested;

STWA88N65M5

N-channel 650 V, 0.024 廓 typ., 84 A, MDmesh??V Power MOSFET in TO-247 and TO-247 long leads packages

STE88N65M5

Higherdv/dtcapability

STW88N65M5

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=84A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=29mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STW88N65M5

N-channel650V,0.024廓typ.,84A,MDmesh??VPowerMOSFETinTO-247andTO-247longleadspackages