N沟道950 V、0.110 Ohm典型值、38 A MDmesh K5功率MOSFET，TO-247长引线封装

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. • Industry’s lowest RDS(on) x area \n• Industry’s best figure of merit (FoM) \n• Ultra low gate charge \n• 100% avalanche tested \n• Zener-protected;

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丝印：40N95K5；Package：TO-247；N-channel 950 V, 0.110 ??typ., 38 A MDmesh??K5 Power MOSFET in a TO-247 long leads package

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STMICROELECTRONICS

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文件：767.42 Kbytes 页数：13 Pages

STMICROELECTRONICS

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