N-channel 950 V, 1.15 Ohm typ., 7 A Zener-protected SuperMESH(TM) Power MOSFET in a TO-247 package

• Extremely high dv/dt capability\n• Gate charge minimized• 100% avalanche tested;

ST

意法半导体

Gate charge minimized

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STMICROELECTRONICS

意法半导体

9.0A, 950V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 9NK95Z is a silicon N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate charge.  FEATURES * RDS(ON) ≤ 1.38 Ω @ VGS=10V, ID=4.5A * High switching speed * Low input capacitan

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UTC

友顺

SOT23-5

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SOT23-5

ST

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