N-CHANNEL 800V - 0.82ohm - 9.4A TO-247 Zener-Protected PowerMESH?줚II MOSFET

The third generation of MESH OVERLAY Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large vari

文件：248.01 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 800V - 0.82ohm - 9.4A TO-247 Zener-Protected PowerMESH™III MOSFET

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意法半导体

N-CHANNEL 800V - 0.82ohm - 8.6A Max220/I-Max220 Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested

文件：407.58 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 800V - 0.82ohm - 8.6A Max220/I-Max220 Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested

文件：407.58 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 800V - 0.82ohm - 8.6A Max220/I-Max220 Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested

文件：407.58 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体