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STU9NC80

N-CHANNEL 800V - 0.82ohm - 8.6A Max220/I-Max220 Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested

文件:407.58 Kbytes 页数:10 Pages

STMICROELECTRONICS

意法半导体

STU9NC80Z

N-CHANNEL 800V - 0.82ohm - 8.6A Max220/I-Max220 Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested

文件:407.58 Kbytes 页数:10 Pages

STMICROELECTRONICS

意法半导体

STU9NC80ZI

N-CHANNEL 800V - 0.82ohm - 8.6A Max220/I-Max220 Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested

文件:407.58 Kbytes 页数:10 Pages

STMICROELECTRONICS

意法半导体

STU9NC80ZI

N-CHANNEL 800V - 0.82ohm - 8.6A Max220/I-Max220 Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested

文件:407.58 Kbytes 页数:10 Pages

STMICROELECTRONICS

意法半导体

STW9NC80Z

N-CHANNEL 800V - 0.82ohm - 9.4A TO-247 Zener-Protected PowerMESH?줚II MOSFET

The third generation of MESH OVERLAY Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large vari

文件:248.01 Kbytes 页数:8 Pages

STMICROELECTRONICS

意法半导体

详细参数

  • 型号:

    STU9NC80

  • 制造商:

    STMICROELECTRONICS

  • 制造商全称:

    STMicroelectronics

  • 功能描述:

    N-CHANNEL 800V - 0.82ohm - 8.6A Max220/I-Max220 Zener-Protected PowerMESH⑩III MOSFET

供应商型号品牌批号封装库存备注价格
ST
22+
TO
6000
十年配单,只做原装
询价
ST
22+
TO
25000
只做原装进口现货,专注配单
询价
ST/意法
22+
TO
97479
询价
ST
25+
TO
35400
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
ST
23+
TO-220F
50000
全新原装正品现货,支持订货
询价
ST/意法
23+
TO-220F
50000
全新原装正品现货,支持订货
询价
ST
13+
TO-220F
21
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
ST
25+
TO-220F
17256
询价
ST/意法
24+
NA/
3382
原厂直销,现货供应,账期支持!
询价
ST/
24+
TO-220F
5000
全新原装正品,现货销售
询价
更多STU9NC80供应商 更新时间2025-10-9 14:02:00