丝印：70N65M2；Package：TO-247；N-channel 650 V, 0.039 Ω typ., 63 A MDmesh™ M2 Power MOSFET in a TO-247 package

Features  Extremely low gate charge  Excellent output capacitance (COSS) profile  100 avalanche tested  Zener-protected Applications  Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and

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STMICROELECTRONICS

意法半导体

N沟道650 V、0.039 Ohm典型值、63 A MDmesh M2功率MOSFET，TO-247封装

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. • Extremely low gate charge \n• Excellent output capacitance (COSS) profile \n• 100% avalanche tested \n• Zener-protected;

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意法半导体

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TO-247

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