N-Channel MOSFET

FEATURES ·Drain Current -ID=46A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.08Ω(Max)@VGS= 10V APPLICATIONS ·Switch Mode Power Supply (SMPS) ·Uninterruptible Power Supply (UPS) ·Power Factor Correction (PFC)

文件：346.71 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：65N80K5；Package：TO-247；N-channel 800 V, 0.07 廓 typ., 46 A MDmesh??K5 Power MOSFET in a TO-247 package

文件：713.6 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N沟道800 V、0.07 Ohm典型值、46 A MDmesh K5功率MOSFET，TO-247封装

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. • Industry’s lowest RDS(on) x area \n• Industry’s best figure of merit (FoM) \n• Ultra low gate charge \n• 100% avalanche tested \n• Zener-protected;

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意法半导体

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TO-247

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公司现货

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