N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET in a TO247-4 package

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. • Worldwide best FOM RDS(on)*Qg among silicon-based devices \n• Higher dv/dt capability \n• Easy to drive \n• 100% avalanche tested;

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意法半导体

TO-247

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上传：深圳深宇韬电子科技有限公司

公司现货

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上传：海芯未来半导体电子（深圳）有限公司

公司现货

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上传：海芯未来半导体电子（深圳）有限公司

TO-247-3

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上传：深圳市博达晶芯科技有限公司