N-channel 650 V, 0.073 typ., 30 A MDmesh M5 Power MOSFET in a TO247-4 package

Features • Extremely low RDS(on) • Low gate charge and input capacitance • Excellent switching performance • 100 avalanche tested Description This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ hori

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STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh M5 Power MOSFET in a TO247-4 package

This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative verticalprocess technology combined with the well-known PowerMESH™ horizontal layout. Theresulting product offers extremely low on-resistance, making it particularly suitablefor applications requiring high power and superior • Extremely low RDS(on)\n• Low gate charge and input capacitance• Excellent switching performance\n• 100% avalanche tested;

ST

意法半导体

TO-247

ST

上传：深圳市博达晶芯科技有限公司

TO-247

ST/意法

上传：深圳庞田科技有限公司

TO247

ST

上传：深圳市亚泰盈科电子有限公司