STW37N60DM2AG

丝印：37N60DM2；Package：TO-247；Automotive-grade N-channel 600 V, 0.094 廓 typ., 28 A MDmesh??DM2 Power MOSFET in a TO-247 package

Description ThishighvoltageN-channelPowerMOSFETis partoftheMDmesh™DM2fastrecoverydiode series.Itoffersverylowrecoverycharge(Qrr) andtime(trr)combinedwithlowRDS(on),rendering itsuitableforthemostdemandinghighefficiency convertersandidealforbridgetopologi

STW37N60DM2AG

Automotive-grade N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFET in a TO-247 package; • Designed for automotive applications and AEC-Q101 qualified\n• Fast-recovery body diode\n• Extremely low gate charge and input capacitance\n• Low on-resistance• 100% avalanche tested\n• Extremely high dv/dt ruggedness\n• Zener-protected;

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.\n \n

37N60DM2

Extremelylowgatechargeandinputcapacitance

STB37N60DM2AG

Extremelylowgatechargeandinputcapacitance