汽车级N沟道600 V、0.094 Ohm典型值、28 A MDmesh DM2功率MOSFET，D2PAK封装

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shi • Designed for automotive applications and AEC-Q101 qualified \n• Fast-recovery body diode \n• Extremely low gate charge and input capacitance \n• Low on-resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

ST

意法半导体

Extremely low gate charge and input capacitance

文件：915.78 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

Automotive-grade N-channel 600 V, 0.094 廓 typ., 28 A MDmesh??DM2 Power MOSFET in a TO-247 package

Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologi

文件：705.54 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Extremely low gate charge and input capacitance

文件：915.78 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体