STB37N60DM2AG

汽车级N沟道600 V、0.094 Ohm典型值、28 A MDmesh DM2功率MOSFET，D2PAK封装; • Designed for automotive applications and AEC-Q101 qualified \n• Fast-recovery body diode \n• Extremely low gate charge and input capacitance \n• Low on-resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.\n\n

STB37N60DM2AG

Extremely low gate charge and input capacitance

37N60DM2

Extremelylowgatechargeandinputcapacitance

STW37N60DM2AG

Automotive-gradeN-channel600V,0.094廓typ.,28AMDmesh??DM2PowerMOSFETinaTO-247package

Description ThishighvoltageN-channelPowerMOSFETis partoftheMDmesh™DM2fastrecoverydiode series.Itoffersverylowrecoverycharge(Qrr) andtime(trr)combinedwithlowRDS(on),rendering itsuitableforthemostdemandinghighefficiency convertersandidealforbridgetopologi

STB55NF06

ST
TO-263

ST