STW20N90K5

N沟道900 V、0.21 Ohm典型值、20 A MDmesh K5功率MOSFET，TO-247封装; • Industry’s lowest RDS(on) x area \n• Industry’s best FoM (figure of merit) \n• Ultra-low gate charge \n• 100% avalanche tested \n• Zener-protected;

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. \n\n

STW20N90K5

Zener-protected

STB20N90K5

N-channel900V,0.21廓typ.,20AMDmesh??K5PowerMOSFETinaD짼PAKpackage

STF20N90K5

N-channel900V,0.21廓typ.,20AMDmesh??K5PowerMOSFETinaTO-220FPpackage

STP20N90K5

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=20A@TC=25℃ ·DrainSourceVoltage-VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.25Ω(Max)@VGS=10V APPLICATIONS ·Switching

STP20N90K5

N-channel900V,0.21廓typ.,20AMDmesh??K5PowerMOSFETinaTO-220package