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STU7LN80K5数据手册ST中文资料规格书
STU7LN80K5规格书详情
描述 Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
特性 Features
• Industry’s lowest RDS(on) x area
• Industry’s best figure of merit (FoM)
• Ultra-low gate charge
• 100% avalanche tested
• Zener-protected
技术参数
- 制造商编号
:STU7LN80K5
- 生产厂家
:ST
- Package
:IPAK
- Grade
:Industrial
- VDSS(V)
:800
- RDS(on)_max(@ VGS=10V)(Ω)
:1.15
- Drain Current (Dc)_max(A)
:5
- PTOT_max(W)
:85
- Qg_typ(nC)
:12
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/ |
22+23+ |
TO251 |
8000 |
新到现货,只做原装进口 |
询价 | ||
ST/意法半导体 |
23+ |
TO-251-3 |
12700 |
买原装认准中赛美 |
询价 | ||
ST/意法 |
24+ |
NA |
3000 |
原装现货,专业配单专家 |
询价 | ||
ST/意法半导体 |
2023+ |
TO-251-3 |
6000 |
原装正品现货、支持第三方检验、终端BOM表可配单提供 |
询价 | ||
ST/意法半导体 |
24+ |
TO-251-3 |
16900 |
原装现货,实单价优 |
询价 | ||
STMicroelectronics |
2022+ |
TO-251-3 短引线,IPak,TO-251A |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
ST/意法半导体 |
25 |
TO-251-3 |
6000 |
原装正品 |
询价 | ||
ST |
25+ |
NA |
16900 |
原装,请咨询 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源! |
询价 | ||
ST/意法半导体 |
22+ |
TO-251-3 |
10000 |
只有原装,原装,假一罚十 |
询价 |