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STU6N60DM2数据手册ST中文资料规格书
STU6N60DM2规格书详情
描述 Description
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
特性 Features
• Fast-recovery body diode
• Extremely low gate charge and input capacitance
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
技术参数
- 制造商编号
:STU6N60DM2
- 生产厂家
:ST
- Package
:IPAK
- Grade
:Industrial
- VDSS(V)
:600
- RDS(on)_max(@ VGS=10V)(Ω)
:1.1
- Drain Current (Dc)_max(A)
:5
- PTOT_max(W)
:60
- Qg_typ(nC)
:6.2
- Features
:Fast recovery diode
- Reverse Recovery Time_typ(ns)
:60
- Qrr_typ(nC)
:135
- Peak Reverse Current_nom(A)
:4.5
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST(意法) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
ST |
1645+ |
TO251 |
200 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST/意法半导体 |
22+ |
TO-251-3 |
10000 |
只有原装,原装,假一罚十 |
询价 | ||
ST/意法半导体 |
23+ |
TO-251-3 |
12700 |
买原装认准中赛美 |
询价 | ||
ST |
22+ |
NA |
15000 |
原装正品支持实单 |
询价 | ||
ST/意法半导体 |
21+ |
TO-251-3 |
8860 |
原装现货,实单价优 |
询价 | ||
ST/意法 |
23+ |
NA |
25630 |
原装正品 |
询价 | ||
ST/意法 |
21+ |
NA |
30000 |
百域芯优势 实单必成 可开13点增值税 |
询价 | ||
ST/意法 |
22+ |
N/A |
14850 |
现货,原厂原装假一罚十! |
询价 | ||
ST/意法 |
21+ |
NA |
12820 |
只做原装,质量保证 |
询价 |