首页 >STU13NM60N>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-channel600V,0.28廓,11AMDmesh??IIPowerMOSFETinTO-220FP | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-channel600V,0.28廓,11AMDmesh??IIPowerMOSFETinI짼PAKFPpackage Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-channel600V,0.28ohmtyp.,11AMDmeshIIPowerMOSFETinTO-220FP,I2PAK,TO-220,IPAK,TO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
IscN-ChannelMOSFETTransistor •FEATURES •DrainCurrent–ID=11A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=360mΩ(Max) •100avalanchetested •Lowinputcapacitanceandgatecharge •MinimumLot-to-Lotvariationsforrobustdevice performanceandrelia | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel600V,0.320廓,10APowerFLAT??(8x8)HVMDmesh??IIPowerMOSFET Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-channel600V,0.28ohmtyp.,11AMDmeshIIPowerMOSFETinTO-220FP,I2PAK,TO-220,IPAK,TO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel600V,0.32typ.,11A,FDmeshIIPowerMOSFET(withfastdiode)inDPAK Description TheseFDmesh™IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh™technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
iscN-ChannelMosfetTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
详细参数
- 型号：
STU13NM60N
- 制造商：
STMicroelectronics
- 功能描述：
MOSFET N-Channel 650V 11A IPAK
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STM |
18+ |
3000 |
TO-251-3 (IPAK) |
询价 | |||
STM |
23+ |
TO-251-3 (IPAK) |
2025 |
原装现货支持送检 |
询价 | ||
ST |
25+23+ |
TO247 |
19300 |
绝对原装正品全新进口深圳现货 |
询价 | ||
STM |
1809+ |
TO-251 |
1675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
22+ |
NA |
3000 |
加我QQ或微信咨询更多详细信息, |
询价 | |||
ST/意法半导体 |
23+ |
TO-251-3 |
6900 |
全新原装正品现货,支持订货 |
询价 | ||
ST/意法半导体 |
24+ |
TO-251-3 |
30000 |
原装正品公司现货,假一赔十! |
询价 | ||
ST/意法半导体 |
24+ |
TO-251-3 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
ST/意法半导体 |
2022+ |
TO-251-3 |
6900 |
原厂原装,假一罚十 |
询价 | ||
ST/意法 |
2022+ |
5000 |
只做原装,价格优惠,长期供货。 |
询价 |
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