Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 400V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):1.5V(Max) @IC=1.6A APPLICATIONS · Electronic Ballast Fluorescent Lighting · Flyback and Forward Single Transistor Low Power Converters

文件：253.64 Kbytes 页数：2 Pages

ISC

无锡固电

High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

文件：268.42 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

文件：268.42 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

High voltage fast-switching NPN power transistor

• Integrated antiparallel collector-emitter diode\n• Minimum lot-to-lot spread for reliable operation• High voltage capability\n• Very high switching speed;

ST

意法半导体

Package：TO-225AA，TO-126-3；包装：管件 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 400V 2A SOT32-3

STMICROELECTRONICS

意法半导体

Package：TO-225AA，TO-126-3；包装：剪切带（CT）带盒（TB） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 400V 2A SOT32-3

STMICROELECTRONICS

意法半导体