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STR2P3LLH6	文件：755.98 Kbytes Page：6 Pages	P-ChannelEnhancementModePowerMOSFET GeneralDescription Theusesadvancedtrenchtechnology toprovideexcellentRDS(ON),lowgatecharge andoperationwithgatevoltagesaslowas2.5V. Thisdeviceissuitableforuseasaloadswitchor inPWMapplications. STR2P3LLH6 Features VDS-30V ID(atVGS=-10V)-5.0A RDS(ON)	LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司	LEIDITECH
STR2P3LLH6	文件：547.07 Kbytes Page：12 Pages	Verylowon-resistance Description ThisdeviceisaP-channelPowerMOSFET developedusingtheSTripFET™H6technology, withanewtrenchgatestructure.Theresulting PowerMOSFETexhibitsverylowRDS(on)inall packages. Features Verylowon-resistance Verylowgatecharge Highavalancheruggedness	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团	STMICROELECTRONICS

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STR2P3LLH6

文件：755.98 Kbytes

Page：6 Pages

P-ChannelEnhancementModePowerMOSFET

GeneralDescription Theusesadvancedtrenchtechnology toprovideexcellentRDS(ON),lowgatecharge andoperationwithgatevoltagesaslowas2.5V. Thisdeviceissuitableforuseasaloadswitchor inPWMapplications. STR2P3LLH6 Features VDS-30V ID(atVGS=-10V)-5.0A RDS(ON)

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH

STR2P3LLH6

文件：547.07 Kbytes

Page：12 Pages

Verylowon-resistance

Description ThisdeviceisaP-channelPowerMOSFET developedusingtheSTripFET™H6technology, withanewtrenchgatestructure.Theresulting PowerMOSFETexhibitsverylowRDS(on)inall packages. Features Verylowon-resistance Verylowgatecharge Highavalancheruggedness

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

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