1200 V power Schottky silicon carbide diode

文件：468.68 Kbytes 页数：10 Pages

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意法半导体

丝印：STPSC2H12；Package：DPAKHV2L；1200 V power Schottky silicon carbide diode

文件：468.68 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

丝印：STPSC2H12D；Package：TO-220AC；1200 V power Schottky silicon carbide diode

文件：468.68 Kbytes 页数：10 Pages

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意法半导体

丝印：PSC2H12Y；Package：DPAKHV；Automotive 1200 V, 2 A power Schottky silicon carbide diode

Features • AEC-Q101 qualified • PPAP capable • No or negligible reverse recovery • High forward surge capability • Operating Tj from -40 °C to 175 °C • Creepage distance of 3 mm as per IEC 60664-1 • ECOPACK2 compliant component Applications • Bootstrap function of SiC MOS-FETS • Snubbe

文件：259.75 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

丝印：PSC2H12Y；Package：DPAKHV；Automotive 1200 V, 2 A power Schottky silicon carbide diode

Features • AEC-Q101 qualified • PPAP capable • No or negligible reverse recovery • High forward surge capability • Operating Tj from -40 °C to 175 °C • Creepage distance of 3 mm as per IEC 60664-1 • ECOPACK2 compliant component

文件：299.25 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

Automotive 1200 V, 2 A power Schottky silicon carbide diode

Features • AEC-Q101 qualified • PPAP capable • No or negligible reverse recovery • High forward surge capability • Operating Tj from -40 °C to 175 °C • Creepage distance of 3 mm as per IEC 60664-1 • ECOPACK2 compliant component

文件：299.25 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

Automotive 1200 V, 2 A power Schottky silicon carbide diode

Features • AEC-Q101 qualified • PPAP capable • No or negligible reverse recovery • High forward surge capability • Operating Tj from -40 °C to 175 °C • Creepage distance of 3 mm as per IEC 60664-1 • ECOPACK2 compliant component Applications • Bootstrap function of SiC MOS-FETS • Snubbe

文件：259.75 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

Automotive 1200 V, 2 A power Schottky silicon carbide diode

Features • AEC-Q101 qualified • PPAP capable • No or negligible reverse recovery • High forward surge capability • Operating Tj from -40 °C to 175 °C • Creepage distance of 3 mm as per IEC 60664-1 • ECOPACK2 compliant component

文件：299.25 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

汽车1200V、2A高浪涌碳化硅二极管

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patte • AEC-Q101 qualified \n• PPAP capable \n• No or negligible reverse recovery \n• High forward surge capability \n• Operating Tj from -40 °C to 175 °C \n• Creepage distance of 3 mm as per IEC 60664-1 \n• ECOPACK2 compliant component;

ST

意法半导体

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：AUTOMOTIVE 1200 V, 2 A HIGH SURG

STMICROELECTRONICS

意法半导体