650 V power Schottky silicon carbide rectifier

Features • No or negligible reverse recovery • Temperature independent switching behavior • High forward surge capability • Operating Tj from -40 °C to 175 °C • Power efficient product • ECOPACK®2 compliant Description The STPSC16H065A SiC diode is an ultrahigh performance power Schottky

文件：235.62 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

650 V、16 A单路高浪涌碳化硅功率肖特基二极管

The STPSC16H065A SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ri • No or negligible reverse recovery \n• Temperature independent switching behavior \n• High forward surge capability \n• Operating Tj from -40 °C to 175 °C \n• Power efficient product \n• ECOPACK®2 compliant;

ST

意法半导体

Package：TO-247-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：SILICON CARBIDE DIODES

STMICROELECTRONICS

意法半导体

650 V power Schottky silicon carbide diode

文件：170.88 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

650 V power Schottky silicon carbide diode

文件：170.88 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体