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STPSC12C065-Y中文资料汽车用650 V、12 A碳化硅功率肖特基二极管数据手册ST规格书
STPSC12C065-Y规格书详情
描述 Description
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature and is ideal for automotive applications.
Especially suited for use as boost diode, this rectifier will enhance the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
特性 Features
• No or negligible reverse recovery
• Switching behavior independent of temperature
• Dedicated to PFC applications
• High forward surge capability
• AEC-Q101 qualified
• PPAP capable
• ECOPACK®2 compliant component
技术参数
- 制造商编号
：STPSC12C065-Y
- 生产厂家
：ST
- Number of Diodes_spec
：1
- Marketing Status
：Active
- Repetitive Peak Reverse Voltage_max(V)
：650
- Average Rectified Current_max(A)
：12
- VF_max(V)
：1.75
- VF measure condition_spec(@ IF)(A)
：12
- Reverse Current_max(mA)
：0.12
- Total capacitive charge(nC)
：29.3
- Non-Repet Peak Forward Surge Current_max(A)
：470
- Junction Temperature_max(°C)
：175
- General Description
：Automotive 650 V
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
100 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ST/意法半导体 |
23+ |
TO-220-3 |
12700 |
买原装认准中赛美 |
询价 | ||
STM |
22+ |
SMD |
30000 |
只做原装正品 |
询价 | ||
ST/意法半导体 |
21+ |
TO-220-3 |
8860 |
原装现货,实单价优 |
询价 | ||
ST |
2526+ |
原厂封装 |
50000 |
15年芯片行业经验/只供原装正品:0755-83270536邹小姐 |
询价 | ||
ST/意法半导体 |
24+ |
TO-220-3 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
ST/意法半导体 |
21+ |
TO-220-3 |
8860 |
只做原装,质量保证 |
询价 | ||
ST |
23+ |
TO-220 |
8000 |
只做原装现货 |
询价 | ||
ST |
23+ |
TO-220AC |
16900 |
正规渠道,只有原装! |
询价 | ||
ST/意法 |
23+ |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 |
