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MBRF30H60CTG

SWITCHMODE??PowerRectifier

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRF30H60CTG

SWITCHMODEPowerRectifier

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRJ30H60CTG

SWITCHMODEPowerRectifier

ONSEMION Semiconductor

安森美半导体安森美半导体公司

STGB30H60DF

600V,30Ahighspeedtrenchgatefield-stopIGBT

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThisIGBTseriesofferstheoptimum compromisebetweenconductionandswitching losses,maximizingtheefficiencyofveryhigh frequencyconverters.Furthermore,apositive VCE(s

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STGB30H60DFB

Trenchgatefield-stopIGBT,HBseries600V,30Ahighspeed

Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThedeviceispartofthenewHBseries ofIGBTs,whichrepresentanoptimum compromisebetweenconductionandswitching lossestomaximizetheefficiencyofany frequencyconve

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STGB30H60DFB

TrenchgateField-StopIGBT

DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.0V@IC=30A ·HighCurrentCapability ·HighInputImpedance ·FastSwitching APPLICATIONS ·SynchronousRectificationinSMPS ·AutomotiveChargers ·UPS,PFC ·HighVoltageAuxiliaries

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STGB30H60DLFB

Trenchgatefield-stopIGBT,HBseries600V,30Ahighspeed

Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThedeviceispartofthenewHB seriesofIGBTs,whichrepresentanoptimum compromisebetweenconductionandswitching lossestomaximizetheefficiencyofany frequencyconve

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STGB30H60DLLFBAG

Automotive-gradetrenchgatefield-stopIGBT,HBseries600V,30Ahighspeed

Features AEC-Q101qualified Maximumjunctiontemperature:TJ=175°C Logiclevelgatedrive Highspeedswitchingseries Minimizedtailcurrent VCE(sat)=1.7V(typ.)@IC=30A LowVFsoftrecoveryco-packageddiode Tightparametersdistribution Saferparalleling L

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STGF30H60DF

600V,30Ahighspeedtrenchgatefield-stopIGBT

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThisIGBTseriesofferstheoptimum compromisebetweenconductionandswitching losses,maximizingtheefficiencyofveryhigh frequencyconverters.Furthermore,apositive VCE(s

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STGO30H60DLLFBAG

Automotive-gradetrenchgatefield-stop,600V,30A,high-speedHBseriesIGBTinaTO‑LLpackage

Features •AEC-Q101qualified •Maximumjunctiontemperature:TJ=175°C •Logiclevelgatedrive •High-speedswitchingseries •Minimizedtailcurrent •VCE(sat)=1.6V(typ.)@IC=30A •LowVFsoft-recoveryco-packageddiode •Tightparameterdistribution •Saferparalleling •Lo

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

供应商型号品牌批号封装库存备注价格
ST
23+24
TO-262
59630
主营原装MOS,二三级管,肖特基,功率场效应管
询价
ST
24+
TO-247
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
ST
23+
TO-247
8560
受权代理!全新原装现货特价热卖!
询价
ST/意法
23+
TO220M
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
ST/意法
24+
TO220M
990000
明嘉莱只做原装正品现货
询价
ST
15+
TO-220
11560
全新原装,现货库存,长期供应
询价
ST
TO-220TO-220FP
22+
6000
十年配单,只做原装
询价
ST
22+
TO-220TO-220FP
25000
只做原装进口现货,专注配单
询价
ST
22+
TO-220TO-220FP
25000
只做原装进口现货,专注配单
询价
ST/意法
22+
TO-220TO-220FP
15451
询价
更多STPS30H60C-Y供应商 更新时间2025-7-21 14:13:00