N-channel 600 V - 0.85 廓 - 7 A - D2PAK, TO-220FP, TO-220 SuperFREDMesh??Power MOSFET

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STMICROELECTRONICS

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N-Channel 650V (D-S) Power MOSFET

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VBSEMI

微碧半导体

N-Channel 650V (D-S) Power MOSFET

文件：1.10937 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

N沟道600 V、0.85 Ohm典型值、7 A有齐纳管保护的SuperMESH(TM) 功率MOSFET，D2PAK封装

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high • Extremely high dv/dt capability \n• Improved ESD capability \n• 100% avalanche tested \n• Gate charge minimized \n• Very low intrinsic capacitances;

ST

意法半导体

N沟道600 V、0.85 Ohm典型值、7 A有齐纳管保护的SuperMESH(TM) 功率MOSFET，TO-220FP封装

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high • Extremely high dv/dt capability \n• Improved ESD capability \n• 100% avalanche tested \n• Gate charge minimized \n• Very low intrinsic capacitances;

ST

意法半导体