isc N-Channel MOSFET Transistor

FEATURES Drain Current -ID= 80A@ TC=25℃ Drain Source Voltage -VDSS= 50V(Min) Static Drain-Source On-Resistance -RDS(on) = 9.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.85 Kbytes 页数：2 Pages

ISC

无锡固电

N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR ■ ULTRA HIGH DENSITY TECHNOLOGY ■ TYPICAL RDS(on)=7 mΩ ■ AVALANCHE RUGGED TECHNOLOGY ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE APPLICATIONS ■ SYNCROUNOUS RECTIFIERS ■ HIGH CURRENT, HIG

文件：114.77 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR

ST

意法半导体

ST
TO-220

ST

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ST
TO-220

ST

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