N-CHANNEL 100V - 0.012ohm - 80A TO-220/TO-220FP LOW GATE CHARGE STripFET?줚I POWER MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer app

文件：334.62 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N-channel 100V - 0.012OHM - 80A - TO-220 / D2PAK Low gate charge STRIPFET TM II Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer app

文件：317.75 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 100 V, 0.012 廓, 80 A, TO-220, D2PAK low gate charge STripFET??II Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer app

文件：585.84 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=80A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 15mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.81 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 100-V (D-S) 175 째C MOSFET

文件：976.21 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N-Channel MOSFET uses advanced trench technology

文件：1.51884 Mbytes 页数：5 Pages

DOINGTER

杜因特

N沟道100V - 0.012Ohm - 80A - TO-220低栅极电荷STripFET(TM) MOSFET

This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is • Exceptional dv/dt capability \n• Application oriented characterization \n• 100% Avalanche tested;

ST

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=80A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 15mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.73 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 100V - 0.012ohm - 80A TO-220/TO-220FP LOW GATE CHARGE STripFET?줚I POWER MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer app

文件：334.62 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

丝印：P80NF10FP；Package：TO-220FP；N-channel 100V - 0.012Ω - 38A - TO-220FP Low gate charge STripFET™ II Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters for Telecom and Computer

文件：226.96 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体